The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Sep. 19, 2013
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Ryu Nakano, Sagamihara, JP;
Naoki Inoue, Hachioji, JP;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/509 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/401 (2013.01); C23C 16/405 (2013.01); C23C 16/4554 (2013.01); C23C 16/5096 (2013.01); H01L 21/0228 (2013.01); H01L 21/02112 (2013.01); H01L 21/02164 (2013.01); H01L 21/02186 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01);
Abstract
A method for forming an oxide film by plasma-assisted processing includes: (i) supplying a precursor reactive to none of oxygen, CO, and NO(x and y are integers) without a plasma to a reaction space wherein a substrate is placed; (ii) exposing the precursor to a plasma of COand/or NOin the reaction space; and (iii) forming an oxide film on the substrate using the precursor and the plasma.
Published as:
US2015079311A1; KR20150032634A; JP2015061075A; TW201518535A; US9284642B2; JP6367658B2; TWI661077B; KR102324575B1;