The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Dec. 30, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
King-Yuen Wong, Hsin-Chu, TW;
Chia-Pin Lin, Hsin-Chu, TW;
Chia-Yu Lu, Hsin-Chu, TW;
Yi-Cheng Tsai, Hsin-Chu, TW;
Da-Wen Lin, Hsin-Chu, TW;
Kuo-Feng Yu, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 29/8605 (2006.01); H01L 21/265 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02595 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 21/823437 (2013.01); H01L 27/0629 (2013.01); H01L 29/8605 (2013.01); H01L 29/66545 (2013.01);
Abstract
A method of fabricating a semiconductor device is disclosed. The method includes providing a substrate including an isolation region, forming a resistor over the isolation region, and forming a contact over the resistor. The method also includes implanting with a dopant concentration that is step-increased at a depth of the resistor and that remains substantially constant as depth increases.