The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Jun. 19, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Sheng-Chau Chen, Tainan, TW;
Chih-Yu Lai, Tainan, TW;
Kuo-Ming Wu, Zhubei, TW;
Kuo-Hwa Tzeng, Taipei, TW;
Cheng-Hsien Chou, Tainan, TW;
Cheng-Yuan Tsai, Chu-Pei, TW;
Yeur-Luen Tu, Taichung, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A vertical-gate transfer transistor of an active pixel sensor (APS) is provided. The transistor includes a semiconductor substrate, a vertical trench extending into the semiconductor substrate, a dielectric lining the vertical trench, and a vertical gate filling the lined vertical trench. The dielectric includes a dielectric constant exceeding 3.9 (i.e., the dielectric constant of silicon dioxide). A method of manufacturing the vertical-gate transfer transistor, an APS including the vertical-gate transfer transistor, a method of manufacturing the APS, and an image sensor including a plurality of the APSs are also provided.