The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Apr. 01, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Yu-Lien Huang, Jhubei, TW;
Chia-Pin Lin, Xinpu Township, TW;
Sheng-Hsiung Wang, Zhubei, TW;
Fan-Yi Hsu, Toufen Town, TW;
Chun-Liang Tai, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 29/66545 (2013.01); H01L 29/513 (2013.01);
Abstract
A semiconductor device which includes a first gate structure on a substrate and a second gate structure on the substrate is provided. The semiconductor device further includes an inter-level dielectric (ILD) layer on the substrate between the first gate structure and the second gate structure, wherein a top portion of the ILD layer has a different etch selectivity than a bottom portion of the ILD layer.