The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Nov. 01, 2011
Applicants:

Daesik Choi, Seoul, KR;

Joungin Yang, Seoul, KR;

Minjung Kim, Kyounggi-do, KR;

Sang MI Park, Kyounggi-do, KR;

Minwook Yu, Gyeonggi-do, KR;

Inventors:

DaeSik Choi, Seoul, KR;

JoungIn Yang, Seoul, KR;

MinJung Kim, Kyounggi-do, KR;

Sang Mi Park, Kyounggi-do, KR;

MinWook Yu, Gyeonggi-do, KR;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/683 (2006.01); H01L 23/36 (2006.01); H01L 23/42 (2006.01); H01L 29/06 (2006.01); H01L 25/065 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); H01L 23/36 (2013.01); H01L 23/42 (2013.01); H01L 24/05 (2013.01); H01L 24/32 (2013.01); H01L 24/34 (2013.01); H01L 24/36 (2013.01); H01L 24/40 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 24/97 (2013.01); H01L 25/0655 (2013.01); H01L 29/0657 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 2221/68345 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/11901 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/26145 (2013.01); H01L 2224/29007 (2013.01); H01L 2224/29011 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/40095 (2013.01); H01L 2224/40225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/83104 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/92125 (2013.01); H01L 2224/92225 (2013.01); H01L 2224/94 (2013.01); H01L 2224/97 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/10158 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/16251 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19105 (2013.01);
Abstract

A semiconductor device has a semiconductor die mounted to a substrate. A recess is formed in a back surface of the semiconductor die to an edge of the semiconductor die with sidewalls on at least two sides of the semiconductor die. The sidewalls are formed by removing a portion of the back surface of the die, or by forming a barrier layer on at least two sides of the die. A channel can be formed in the back surface of the semiconductor die to contain the TIM. A TIM is formed in the recess. A heat spreader is mounted in the recess over the TIM with a down leg portion of the heat spreader thermally connected to the substrate. The sidewalls contain the TIM to maintain uniform coverage of the TIM between the heat spreader and back surface of the semiconductor die.


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