The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Apr. 19, 2013
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Ken Sato, Miyoshi-machi, JP;
Hirokazu Goto, Minato-ku, JP;
Hiroshi Shikauchi, Niiza, JP;
Keitaro Tsuchiya, Takasaki, JP;
Masaru Shinomiya, Annaka, JP;
Kazunori Hagimoto, Takasaki, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
The invention provides a method for manufacturing a nitride semiconductor device that grows a multilayer film of a III-V group nitride semiconductor in a reaction furnace into which a III group element raw material gas and a V group element raw material gas are introduced, the method including: growing a first nitride semiconductor layer at a first raw material gas flow rate of the V group element raw material gas and a first carrier gas flow rate; and growing a second nitride semiconductor layer at a second raw material gas flow rate of the V group element raw material gas lower than the first raw material gas flow rate and a second carrier gas flow rate higher than the first carrier gas flow rate, wherein the first nitride semiconductor layer and the second nitride semiconductor layer are stacked.