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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9279184 B1

PDFFull Text
Date of Patent:
Mar. 08, 2016

Filed:

Jul. 10, 2013

Method of forming a pattern and substrate processing system

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kazuhiro Kubota, Miyagi, JP;

Ryukichi Shimizu, Miyagi, JP;

Assignee:

Tokyo Electron Limited, Tokyo, JP;

Attorney:

IPUSA, PLLC

Primary Examiner:

Lan Vinh

Assistant Examiner:

Maki Angadi

Int. Cl.
CPC ...
C23F 1/02 (2006.01); C23C 16/455 (2006.01); C23C 16/04 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/768 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45525 (2013.01); C23C 16/045 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/45542 (2013.01); H01J 37/32935 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01); H01L 21/76816 (2013.01); H01J 2237/3347 (2013.01);
Abstract

A method of forming a pattern is provided. The method includes an etching step of forming a predetermined pattern in a silicon-containing film by etching the silicon-containing film deposited on a substrate through a mask by plasma generated from an etching gas containing a fluorocarbon gas, and a film deposition step of depositing a silicon oxide film or a silicon nitride film on a surface of the predetermined pattern by oxidizing or nitriding a silicon-containing layer adsorbed on the surface of the predetermined pattern by supplying a silicon compound gas, by using plasma generated from an oxidation gas or a nitriding gas.

Find Patent Forward Citations

Kubota, Kazuhiro. (2016). Method of forming a pattern and substrate processing system (U.S. Patent No. 9279184). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9279184

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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