logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9276211 B1

PDFFull Text
Date of Patent:
Mar. 01, 2016

Filed:

May. 26, 2015

Non-volatile resistive-switching memories

Applicant:

Intermolecular Inc., San Jose, CA (US);

Inventors:

Prashant B Phatak, San Jose, CA (US);

Tony P. Chiang, Campbell, CA (US);

Pragati Kumar, Beaverton, OR (US);

Michael Miller, San Jose, CA (US);

Assignee:

Intermolecular, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:

Selim Ahmed

Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 47/00 (2006.01); H01L 29/861 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/146 (2013.01); G11C 13/0007 (2013.01); H01L 29/8615 (2013.01); H01L 45/08 (2013.01); H01L 45/10 (2013.01); H01L 45/122 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/165 (2013.01); H01L 45/1616 (2013.01); H01L 45/1625 (2013.01); H01L 45/1641 (2013.01); H01L 45/1658 (2013.01); H01L 47/00 (2013.01); G11C 2213/32 (2013.01); G11C 2213/55 (2013.01); G11C 2213/72 (2013.01); H01L 27/2409 (2013.01); H01L 27/2463 (2013.01);
Abstract

Non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. The metal oxide switches using bulk-mediated switching, has a bandgap greater than 4 electron volts (eV), has a set voltage for a set operation of at least one volt per one hundred angstroms of a thickness of the metal oxide, and has a leakage current density less than 40 amps per square centimeter (A/cm) measured at 0.5 volts (V) per twenty angstroms of the thickness of the metal oxide.

Find Patent Forward Citations

Loading…