The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Mar. 10, 2014
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Bruce B. Doris, Slinerlands, NY (US);
Ali Khakifirooz, Los Altos, CA (US);
Darsen D. Lu, Mount Kisco, NY (US);
Alexander Reznicek, Troy, NY (US);
Kern Rim, Yorktown Heights, NY (US);
International Business Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor device that includes forming a gate structure on a fin structure and etching the source and drain region portions of the fin structure to provide a recessed surface. A first semiconductor layer is formed on the recessed surface of the fin structure that is doped to a first conductivity type. A leakage barrier layer is formed on the first semiconductor layer. A second semiconductor layer is formed on the leakage barrier layer. The second semiconductor layer is doped to a second conductivity type.