The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Sep. 18, 2014
Applicant:
Avogy, Inc., San Jose, CA (US);
Inventors:
Richard J. Brown, Los Gatos, CA (US);
Isik C. Kizilyalli, San Francisco, CA (US);
Hui Nie, Cupertino, CA (US);
Andrew P. Edwards, San Jose, CA (US);
David P. Bour, Cupertino, CA (US);
Assignee:
Avogy, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/20 (2006.01); H01L 21/332 (2006.01); H01L 29/66 (2006.01); H01L 29/812 (2006.01); H01L 29/808 (2006.01); H01L 21/02 (2006.01); H01L 21/32 (2006.01); H01L 29/36 (2006.01); H01L 29/47 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66856 (2013.01); H01L 21/0254 (2013.01); H01L 21/02647 (2013.01); H01L 21/32 (2013.01); H01L 29/2003 (2013.01); H01L 29/36 (2013.01); H01L 29/475 (2013.01); H01L 29/8083 (2013.01); H01L 29/812 (2013.01); H01L 29/8122 (2013.01); H01L 29/1066 (2013.01); H01L 29/1608 (2013.01);
Abstract
A semiconductor structure includes a III-nitride substrate and a drift region coupled to the III-nitride substrate along a growth direction. The semiconductor substrate also includes a channel region coupled to the drift region. The channel region is defined by a channel sidewall disposed substantially along the growth direction. The semiconductor substrate further includes a gate region disposed laterally with respect to the channel region.