The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Nov. 25, 2014
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Eric Tan Swee Seng, Singapore, SG;

Lee Choon Kuan, Singapore, SG;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 21/44 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/18 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/44 (2013.01); H01L 24/48 (2013.01); H01L 25/50 (2013.01); H01L 25/18 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/06135 (2013.01); H01L 2224/06136 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/4824 (2013.01); H01L 2224/48221 (2013.01); H01L 2224/4943 (2013.01); H01L 2224/73215 (2013.01); H01L 2224/73265 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06575 (2013.01); H01L 2225/06579 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01087 (2013.01); H01L 2924/14 (2013.01); H01L 2924/15311 (2013.01);
Abstract

Methods of manufacturing semiconductor device assemblies include attaching a back side of a first semiconductor die to a substrate and structurally and electrically coupling a first end of laterally extending conductive elements to conductive terminals on or in a surface of the substrate. Second ends of the laterally extending conductive elements are structurally and electrically coupled to bond pads on or in an active surface of the first semiconductor die. Conductive structures are structurally and electrically coupled to bond pads of a second semiconductor die. At least some of the conductive structures are aligned with at least some of the bond pads of the first semiconductor die. An active surface of the second semiconductor die faces an active surface of the first semiconductor die. At least some of the conductive structures are structurally and electrically coupled to at least some of the bond pads of the first semiconductor die.


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