The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Jun. 01, 2012
Applicants:
Hong-seng Shue, Zhubei, TW;
Tai-i Yang, Hsin-Chu, TW;
Wei-ding Wu, Zhubei, TW;
Ming-tai Chung, Hsin-Chu, TW;
Shao-chi Yu, Hsin-Chu, TW;
Inventors:
Hong-Seng Shue, Zhubei, TW;
Tai-I Yang, Hsin-Chu, TW;
Wei-Ding Wu, Zhubei, TW;
Ming-Tai Chung, Hsin-Chu, TW;
Shao-Chi Yu, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 29/06 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76283 (2013.01); H01L 21/764 (2013.01); H01L 21/7682 (2013.01); H01L 21/76264 (2013.01); H01L 21/76289 (2013.01); H01L 29/0649 (2013.01); H01L 2221/1047 (2013.01);
Abstract
A device includes a semiconductor substrate, a contact plug over the semiconductor substrate, and an Inter-Layer Dielectric (ILD) layer over the semiconductor substrate, with the contact plug being disposed in the ILD. An air gap is sealed by a portion of the ILD and the semiconductor substrate. The air gap forms a full air gap ring encircling a portion of the semiconductor substrate.