The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Sep. 13, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Ching-Ling Lin, Kaohsiung, TW;
Chih-Sen Huang, Tainan, TW;
Shih-Fang Tzou, Tainan, TW;
Chien-Ting Lin, Hsinchu, TW;
Yi-Wei Chen, Taichung, TW;
Shi-Xiong Lin, Yilan County, TW;
Chun-Lung Chen, Tainan, TW;
Kun-Yuan Liao, Hsin-Chu, TW;
Feng-Yi Chang, Tainan, TW;
Hsiao-Pang Chou, New Taipei, TW;
Chia-Lin Lu, Taoyuan, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The metal gate structure includes at least a substrate, a dielectric layer, first and second trenches, first metal layer and second metal layers, and two cap layers. In particular, the dielectric layer is disposed on the substrate, and the first and second trenches are disposed in the dielectric layer. The width of the first trench is less than the width of the second trench. The first and second metal layers are respectively disposed in the first trench and the second trench, and the height of the first metal layer is less than or equal to the height of the second metal layer. The cap layers are respectively disposed in a top surface of the first metal layer and a top surface of the second metal layer.