The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Apr. 20, 2012
Ken-ichi Goto, Hsin-Chu, TW;
Dhanyakumar Mahaveer Sathaiya, Hsinchu, TW;
Ching-chang Wu, Douliu, TW;
Tzer-min Shen, Hsinchu, TW;
Ken-Ichi Goto, Hsin-Chu, TW;
Dhanyakumar Mahaveer Sathaiya, Hsinchu, TW;
Ching-Chang Wu, Douliu, TW;
Tzer-Min Shen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A transistor structure with improved device performance, and a method for forming the same is provided. The transistor structure is an SOI (silicon-on-insulator) transistor. In one embodiment, a silicon layer over the oxide layer is a relatively uniform film and in another embodiment, the silicon layer over the oxide layer is a silicon fin. The transistor devices include source/drain structures formed of a strain material that extends through the silicon layer, through the oxide layer and into the underlying substrate which may be silicon. The source/drain structures also include portions that extend above the upper surface of the silicon layer thereby providing an increased volume of the strain layer to provide added carrier mobility and higher performance.