The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Sep. 25, 2012
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Takayuki Sekine, Miyagi, JP;
Masaru Sasaki, Miyagi, JP;
Naoki Matsumoto, Miyagi, JP;
Eiichirou Shinpuku, Kumamoto, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/3222 (2013.01); H01J 37/3244 (2013.01); H01J 37/32192 (2013.01); H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01);
Abstract
An etching method and apparatus for etching a silicon oxide film selectively with respect to a silicon nitride film formed on a substrate are provided. A processing gas containing a plasma excitation gas and a CHF-based gas is introduced into a processing chamber such that a flow rate ratio of the CHF-based gas to the plasma excitation gas is 1/15 or higher. By generating a plasma in the processing chamber, the silicon oxide film is etched selectively with respect to the silicon nitride film formed on the substrate in the processing chamber.