The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Mar. 12, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Nicolas Posseme, Carantec, FR;

Olivier Joubert, Meylan, FR;

Thibaut David, Goncelin, FR;

Thorsten Lill, Santa Clara, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 29/66575 (2013.01); H01L 29/66628 (2013.01); H01L 29/7834 (2013.01); H01L 21/3105 (2013.01);
Abstract

Embodiments of methods of forming silicon nitride spacers are provided herein. In some embodiments, a method of forming silicon nitride spacers atop a substrate includes: depositing a silicon nitride layer atop an exposed silicon containing layer and an at least partially formed gate stack disposed atop a substrate; modifying a portion of the silicon nitride layer by exposing the silicon nitride layer to a hydrogen or helium containing plasma that is substantially free of fluorine; and removing the modified portion of the silicon nitride layer by performing a wet cleaning process to form the silicon nitride spacers, wherein the wet cleaning process removes the modified portion of the silicon nitride layer selectively to the silicon containing layer.


Find Patent Forward Citations

Loading…