The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Aug. 18, 2014
Globalfoundries Inc., Grand Cayman, KY;
Kristina Trevino, Austerlitz, NY (US);
Yuan-Hung Liu, Cohoes, NY (US);
Gabriel Padron Wells, Saratoga Springs, NY (US);
Xing Zhang, Ballston Lake, NY (US);
Hoong Shing Wong, Hsinchu, TW;
Chang Ho Maeng, Ballston Spa, NY (US);
Taejoon Han, Clifton Park, NY (US);
Gowri Kamarthy, Pleasanton, CA (US);
Isabelle Orain, Alameda, CA (US);
Ganesh Upadhyaya, Pleasanton, CA (US);
LAM RESEARCH CORPORATION, Fremont, CA (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Semiconductor structures and fabrication methods are provided which includes, for instance, providing a gate structure over a semiconductor substrate, the gate structure including multiple conformal gate layers and a gate material disposed within the multiple conformal gate layers; recessing a portion of the multiple conformal gate layers below an upper surface of the gate structure, where upper surfaces of recessed, multiple conformal gate layers are coplanar; and removing a portion of the gate material to facilitate an upper surface of a remaining portion of the gate material to be coplanar with an upper surface of the recessed, multiple conformal gate layers.