The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Sep. 12, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hoi-Tou Ng, Hsinchu, TW;
Kuei-Liang Lu, Hsinchu, TW;
Ming-Feng Shieh, Yongkang, TW;
Ru-Gun Liu, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Methods for patterning fins for fin-like field-effect transistor (FinFET) devices are disclosed. An exemplary method includes providing a semiconductor substrate, forming a plurality of elongated protrusions on the semiconductor substrate, the elongated protrusions extending in a first direction, and forming a mask covering a first portion of the elongated protrusions, the mask being formed of a first material having a first etch rate. The method also includes forming a spacer surrounding the mask, the spacer being formed of a second material with an etch rate lower than the etch rate of the first material, the mask and the spacer together covering a second portion of the elongated protrusions larger than the first portion of the elongated protrusions. Further, the method includes removing a remaining portion of the plurality of elongated protrusions not covered by the mask and spacer.