The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2016

Filed:

Aug. 31, 2011
Applicants:

Wen-chi Tsai, Hsin-Chu, TW;

Chia-han Lai, Zhubei, TW;

Yung-chung Chen, Hsin-Chu, TW;

Mei-yun Wang, Chu-Pei, TW;

Chii-ming Wu, Taipei, TW;

Fang-cheng Chen, Hsin-Chu, TW;

Huang-ming Chen, Hsin-Chu, TW;

Ming-ta Lei, Hsin-Chu, TW;

Inventors:

Wen-Chi Tsai, Hsin-Chu, TW;

Chia-Han Lai, Zhubei, TW;

Yung-Chung Chen, Hsin-Chu, TW;

Mei-Yun Wang, Chu-Pei, TW;

Chii-Ming Wu, Taipei, TW;

Fang-Cheng Chen, Hsin-Chu, TW;

Huang-Ming Chen, Hsin-Chu, TW;

Ming-Ta Lei, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 29/417 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28512 (2013.01); H01L 21/02063 (2013.01); H01L 21/28518 (2013.01); H01L 21/76802 (2013.01); H01L 21/76805 (2013.01); H01L 21/76814 (2013.01); H01L 21/76825 (2013.01); H01L 21/76831 (2013.01); H01L 21/76844 (2013.01); H01L 21/76855 (2013.01); H01L 29/41775 (2013.01); H01L 29/6659 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.


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