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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9250525 B1

PDFFull Text
Date of Patent:
Feb. 02, 2016

Filed:

Aug. 25, 2015

Resist underlayer film-forming composition

Applicant:

Nissan Chemical Industries, Ltd., Tokyo, JP;

Inventors:

Takafumi Endo, Toyama, JP;

Rikimaru Sakamoto, Toyama, JP;

Noriaki Fujitani, Toyama, JP;

Assignee:

NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Cynthia Hamilton

Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/40 (2006.01); H01L 21/027 (2006.01); G03F 7/09 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01); C09D 167/00 (2006.01); C09D 175/12 (2006.01); C08G 73/10 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/091 (2013.01); C08G 73/101 (2013.01); C09D 167/00 (2013.01); C09D 175/12 (2013.01); G03F 7/11 (2013.01); G03F 7/40 (2013.01); H01L 21/0274 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); G03F 7/2037 (2013.01);
Abstract

A composition forms a resist underlayer film showing improved adhesiveness to a resist pattern. A resist underlayer film-forming composition for lithography, including: a polymer that has a structure of Formula (1a), Formula (1b), or Formula (2) below on an end of the polymer; and an organic solvent: where Ris a hydrogen atom or a methyl group; each of Rand Ris independently a hydrogen atom or an organic group such as a hydrocarbon group, etc., the hydrocarbon group optionally has at least one of a hydroxy group and a methylthio group as substituent(s); Ris a hydrogen atom or a hydroxy group; Qis an arylene group; v is 0 or 1; y is an integer of 1 to 4; w is an integer of 1 to 4; xis 0 or 1; and xis an integer of 1 to 5.

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