The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Apr. 07, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
An-Chun Tu, Taipei, TW;
Chen-Ming Huang, Hsinchu, TW;
Chih-Jen Wu, Chu-Dong Town, Hsin-chu County, TW;
Chin-Hsiang Lin, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); G01R 31/26 (2014.01); H01L 21/66 (2006.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2644 (2013.01); G01R 31/2884 (2013.01); H01L 22/14 (2013.01); H01L 22/32 (2013.01); H01L 22/34 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method performed using a resistive device, where the resistive device includes a substrate with an active region separated from a gate electrode by a dielectric and electrical contacts along a longest dimension of the gate electrode, the method comprising, performing one or more processes to form the resistive device, measuring a resistance between the electrical contacts, and correlating the measured resistance with a variation in one or more of the processes.