The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Jul. 26, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Taiwan, CN;
Inventors:
Yu-Ti Su, Taiwan, CN;
Wun-Jie Lin, Taiwan, CN;
Tsung-Che Tsai, Taiwan, CN;
Jen-Chou Tseng, Taiwan, CN;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H01L 29/74 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01); H01L 27/0262 (2013.01); H01L 29/7436 (2013.01);
Abstract
A semiconductor device is disclosed that includes a first well of a first conductivity type, a second well of a second conductivity type, a plurality of first regions, a second region and a plurality of electrodes. The first regions are of the first conductivity type and are formed in the second well. The second region is of the second conductivity type and is formed in the first well. Each of the electrodes is formed upon the second well and between adjacent two first regions of the first regions.