The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Dec. 30, 2011
Charles C. Kuo, Hillsboro, OR (US);
Brian S. Doyle, Portland, OR (US);
Arijit Raychowdhury, Hillsboro, OR (US);
Roksana Golizadeh Mojarad, San Jose, CA (US);
Kaan Oguz, Dublin, IE;
Charles C. Kuo, Hillsboro, OR (US);
Brian S. Doyle, Portland, OR (US);
Arijit Raychowdhury, Hillsboro, OR (US);
Roksana Golizadeh Mojarad, San Jose, CA (US);
Kaan Oguz, Dublin, IE;
INTEL CORPORATION, Santa Clara, CA (US);
Abstract
Techniques are disclosed for enhancing performance of a perpendicular magnetic tunnel junction (MTJ) by implementing an additional ferromagnetic layer therein. The additional ferromagnetic layer can be implemented, for example, in or otherwise proximate either the fixed ferromagnetic layer or the free ferromagnetic layer of the perpendicular MTJ. In some embodiments, the additional ferromagnetic layer is implemented with a non-magnetic spacer, wherein the thickness of the additional ferromagnetic layer and/or spacer can be adjusted to sufficiently balance the energy barrier between parallel and anti-parallel states of the perpendicular MTJ. In some embodiments, the additional ferromagnetic layer is configured such that its magnetization is opposite that of the fixed ferromagnetic layer.