The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Jan. 13, 2014
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Chia-Cheng Chou, Keelung, TW;
Chung-Chi Ko, Jushan Jen, TW;
Po-Cheng Shih, Hsinchu, TW;
Chih-Hung Sun, Hsinchu, TW;
Kuang-Yuan Hsu, Taichung, TW;
Joung-Wei Liou, Zhudong Town, TW;
Tze-Liang Lee, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Abstract
Embodiments of the disclosure provide a method for forming a semiconductor device structure. The method includes forming a dielectric layer over a semiconductor substrate. The method also includes applying a carbon-containing material over the dielectric layer. The method further includes irradiating the dielectric layer and the carbon-containing material with a light to repair the dielectric layer, and the light has a wavelength greater than about 450 nm.