The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Jun. 24, 2014
Applied Materials, Inc., Santa Clara, CA (US);
Sang Wook Kim, Palo Alto, CA (US);
Han Soo Cho, San Jose, CA (US);
Joo Won Han, Santa Clara, CA (US);
Kee Young Cho, San Jose, CA (US);
Kuan-Ting Liu, Stanford, CA (US);
Anisul Khan, Santa Clara, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
In some embodiments, a method of forming a three dimensional NAND structure atop a substrate may include providing to a process chamber a substrate having alternating nitride layers and oxide layers or alternating polycrystalline silicon layers and oxide layers formed atop the substrate and a photoresist layer formed atop the alternating layers; etching the photoresist layer to expose at least a portion of the alternating nitride layers and oxide layers or alternating polycrystalline silicon layers and oxide layers; providing a process gas comprising sulfur hexafluoride (SF), carbon tetrafluoride (CF), and oxygen (O) to the process chamber; providing an RF power of about 4 kW to about 6 kW to an RF coil to ignite the process gas to form a plasma; and etching through a desired number of the alternating layers to form a feature of a NAND structure.