The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
May. 12, 2014
Infineon Technologies Ag, Neubiberg, DE;
Roman Baburske, Otterfing, DE;
Matteo Dainese, Villach, AT;
Peter Lechner, Holzkirchen, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Johannes Georg Laven, Taufkirchen, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a semiconductor mesa with at least one body zone forming first pn junctions with source zones and a second pn junction with a drift zone. A pedestal layer at a side of the drift zone opposite to the at least one body zone includes first zones of a conductivity type of the at least one body zone and second zones of the conductivity type of the drift zone. Electrode structures are on opposite sides of the semiconductor mesa. At least one of the electrode structures includes a gate electrode controlling a charge carrier flow through the at least one body zone. In a separation region between two of the source zones (i) a capacitive coupling between the gate electrode and the semiconductor mesa or (ii) a conductivity of majority charge carriers of the drift zone is lower than outside of the separation region.