The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2016

Filed:

Mar. 06, 2013
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Harmeet Singh, Eindhoven, NL;

Vadim Yevgenyevich Banine, Deurne, NL;

Jozef Maria Finders, Veldhoven, NL;

Sander Frederik Wuister, Eindhoven, NL;

Roelof Koole, Eindhoven, NL;

Emiel Peeters, Eindhoven, NL;

Assignee:

ASML NETHERLANDS B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/16 (2006.01); G03F 7/038 (2006.01); G03F 7/00 (2006.01); G03F 7/20 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); G03F 7/30 (2006.01); G03F 7/40 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/162 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); G03F 7/0002 (2013.01); G03F 7/038 (2013.01); G03F 7/165 (2013.01); G03F 7/2022 (2013.01); G03F 7/2024 (2013.01); G03F 7/30 (2013.01); G03F 7/40 (2013.01); H01L 21/027 (2013.01);
Abstract

A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature.


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