The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Sep. 04, 2014
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Wei-Hsin Liu, Changhua County, TW;
Tzu-Chin Wu, Chiayi County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7843 (2013.01); H01L 21/0217 (2013.01); H01L 21/0234 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01);
Abstract
A method for manufacturing a silicon nitride layer and a method for manufacturing a semiconductor structure applying the same are provided. The method for manufacturing a silicon nitride layer includes forming the silicon nitride layer and stressing the silicon nitride layer by a high density plasma chemical vapor deposition (HDPCVD) treatment.
Liu, Wei-Hsin. (2015). Method for manufacturing silicon nitride layer and method for manufacturing semiconductor structure applying the same (U.S. Patent No. 9219151). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9219151
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile