The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Mar. 07, 2014
Globalfoundries Inc., Grand Cayman, KY;
International Business Machines Corporation, Armonk, NY (US);
Xiuyu Cai, Niskayuna, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Ajey P. Jacob, Watervliet, NY (US);
Witold P. Maszara, Morgan Hill, CA (US);
Kangguo Cheng, Schenecdtady, NY (US);
Ali Khakifirooz, Mountain View, CA (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
International Business Machines Corporation, Armonk, NY (US);
Abstract
One method disclosed includes, among other things, forming an initial fin structure comprised of portions of a substrate, a first epi semiconductor material and a second epi semiconductor material, forming a layer of insulating material so as to over-fill the trenches that define the fin, recessing a layer of insulating material such that a portion, but not all, of the second epi semiconductor portion of the final fin structure is exposed, forming a gate structure around the final fin structure, further recessing the layer of insulating material such that the first epi semiconductor material is exposed, removing the first epi semiconductor material to thereby define an under-fin cavity and substantially filling the under-fin cavity with a stressed material.