The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Feb. 19, 2014
United Microelectronics Corp., Hsinchu, TW;
Ming-Hua Chang, Tainan, TW;
Tien-Wei Yu, Kaohsiung, TW;
I-Cheng Hu, Kaohsiung, TW;
Chieh-Lung Wu, Kaohsiung, TW;
Yu-Shu Lin, Pingtung County, TW;
Chun-Jen Chen, Tainan, TW;
Tsung-Mu Yang, Tainan, TW;
Tien-Chen Chan, Tainan, TW;
Chin-Cheng Chien, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating a semiconductor device, and a semiconductor device made with the method are described. In the method, a cavity is formed in a substrate, a first epitaxy process is performed under a pressure higher than 65 torr to form a buffer layer in the cavity, and a second epitaxy process is performed to form a semiconductor compound layer on the buffer layer in the cavity. In the semiconductor device, the ratio (S/Y) of the thickness S of the buffer layer on a lower sidewall of the cavity to the thickness Y of the buffer layer at the bottom of the cavity ranges from 0.6 to 0.8.