The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2015

Filed:

Jul. 12, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chia-Cheng Chang, Baoshan Township, TW;

Wei-Kuan Yu, Hsinchu, TW;

Yen-Hsu Chu, Taipei, TW;

Tsai-Ming Huang, Zhubei, TW;

Chin-Min Huang, Taichung, TW;

Cherng-Shyan Tsay, Toufen Township, TW;

Chien Wen Lai, Hsinchu, TW;

Hua-Tai Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/38 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/38 (2013.01); G03F 7/20 (2013.01);
Abstract

Provided is an integrated circuit (IC) photo mask. The IC photo mask includes a main feature of the IC, the main feature having a plurality of sides, and a plurality of assist features, the assist features being spaced from each other and spaced from the main feature, wherein each one of the assist features is adjacent to one of the sides, each one of the assist features has an elongated shape along a direction, whereby extending the shape in the direction would intersect at least another one of the assist features and the assist features are sub-resolution correction features for correcting for optical proximity effect in a photolithography process.


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