The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Aug. 20, 2014
United Microelectronics Corp., Hsin-Chu, TW;
Ching-Ling Lin, Kaohsiung, TW;
Chih-Sen Huang, Tainan, TW;
Shih-Fang Tzou, Tainan, TW;
Chien-Ting Lin, Hsinchu, TW;
Yi-Wei Chen, Taichung, TW;
Shi-Xiong Lin, Yilan County, TW;
Chun-Lung Chen, Tainan, TW;
Kun-Yuan Liao, Hsin-Chu, TW;
Feng-Yi Chang, Tainan, TW;
Hsiao-Pang Chou, New Taipei, TW;
Chia-Lin Lu, Taoyuan County, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for fabricating a metal gate structure includes providing a substrate on which a dielectric layer, a first trench disposed in the dielectric layer, a first metal layer filling up the first trench, a second trench disposed in the dielectric layer, a second metal layer filling up the second trench are disposed, and the width of the first trench is less than the width of the second trench; forming a mask layer to completely cover the second trench; performing a first etching process to remove portions of the first metal layer when the second trench is covered by the mask layer; and performing a second etching process to concurrently remove portions of the first metal layer and portions of the second metal layer after the first etching process.