The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Mar. 28, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Geng-Shuoh Chang, Taipei, TW;
Chun-Sheng Wu, Hsinchu, TW;
Chun-Li Lin, Hsinchu, TW;
Yi-Fang Li, Hemei Township, TW;
Po-Hsiung Leu, Lujhu Township, TW;
Ding-I Liu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor structure includes a semiconductor substrate, a dielectric layer formed over the semiconductor substrate, a first anti-etch layer, a second anti-etch layer and a conductive material. The dielectric layer has an opening. The first anti-etch layer is formed on the sidewall of the opening and made of a material having resistance to peroxide. The second anti-etch layer is formed over the first anti-etch layer and made of a material having resistance to acid. The conductive material is formed within the opening and in contact with the second anti-etch layer.