The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Oct. 11, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kuo-Min Lin, Taichung, TW;
Wei-Lun Hong, Hsinchu, TW;
Ying-Tsung Chen, Hsinchu, TW;
Liang-Guang Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate and a trench isolation. The trench isolation is located in the semiconductor substrate, and includes a first cushion layer, a second cushion layer and an insulating filler. The first cushion layer is peripherally enclosed by the semiconductor substrate, the second cushion layer is peripherally enclosed by the first cushion layer, and insulating filler is peripherally enclosed by the second cushion layer. A method for fabricating the semiconductor device is also provided herein.