The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Jan. 31, 2013
Tokyo Electron Limited, Tokyo, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
In a plasma etching method for etching a metal layer of a substrate to be processed through a hard mask by using a plasma etching apparatus, a first step in which a first etching gas comprising a mixed gas of O, CFand HBr is used as an etching gas, and a second step in which a second etching gas comprising a mixed gas of Oand CFis used as an etching gas, are continuously and alternately repeated a plurality of times. At this time, a first high-frequency power of a first frequency and a second high-frequency power of a second frequency, which is lower than the first frequency, are applied to a lower electrode, and the first high-frequency power is applied in a pulse form.