The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

Oct. 21, 2013
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Eiichi Nishimura, Miyagi, JP;

Masato Kushibiki, Miyagi, JP;

Takashi Sone, Miyagi, JP;

Akitaka Shimizu, Miyagi, JP;

Fumiko Yamashita, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01); H01J 37/32 (2006.01); C23F 1/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); C23F 4/00 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32082 (2013.01); C23F 1/02 (2013.01); C23F 4/00 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/31138 (2013.01); H01L 21/32136 (2013.01); H01L 21/32139 (2013.01); H01J 2237/334 (2013.01);
Abstract

A method of etching a copper layer of a target object including, on the copper layer, a mask having a pattern to be transferred onto the copper layer is provided. The method includes etching the copper layer by using plasma of a first gas containing a hydrogen gas; and processing the target object by using plasma of a second gas containing a hydrogen gas and a gas (hereinafter, referred to as 'deposition gas') that is deposited on the target object. Further, the etching of the copper layer by using plasma of the first gas and the processing of the target object by using plasma of the second gas are repeated alternately.


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