The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Aug. 06, 2013
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/00 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/02057 (2013.01); H01L 27/1463 (2013.01); H01L 27/14685 (2013.01); H01J 37/3266 (2013.01); H01J 37/32091 (2013.01);
Abstract
A method of forming a pattern on a silicon layer of a substrate, to be processed, wherein a semiconductor device is formed at a front surface side of the substrate that is supported by a support substrate at the front surface side, includes an etching step of etching the substrate by plasma via a mask having a predetermined pattern formed at a back surface side of the silicon layer of the substrate; and a cleaning step of cleaning the substrate by plasma using cleaning gas obtained by mixing CF series gas and inert-gas, after the etching step.