The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Jan. 24, 2013
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Khaled Z. Ahmed, Anaheim, CA (US);
Prabu Gopalraja, San Jose, CA (US);
Atif Noori, Saratoga, CA (US);
Mei Chang, Saratoga, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 21/67 (2006.01); H01L 23/482 (2006.01); H01L 29/772 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); H01L 21/28525 (2013.01); H01L 21/6715 (2013.01); H01L 21/6719 (2013.01); H01L 21/67207 (2013.01); H01L 23/4827 (2013.01); H01L 29/772 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Described are apparatus and methods for forming films comprise indium and arsenic. In particular, these films may be formed in a configuration of two or more chambers under 'load lock' conditions. These films may include additional components as dopants, such as aluminum and/or gallium. Such films can be used in metal/silicon contacts having low contact resistances. Also disclosed are devices including the films comprising indium arsenide.