The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Mar. 23, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Jeng-Shyan Lin, Tainan, TW;
Dun-Nian Yaung, Taipei, TW;
Jen-Cheng Liu, Hsin-Chu, TW;
Wen-De Wang, Minsyong Township, TW;
Shuang-Ji Tsai, Tainan, TW;
Yueh-Chiou Lin, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An image sensor device includes a semiconductor substrate having a front side and a backside. A first dielectric layer is on the front side of the semiconductor substrate. A metal pad is in the first dielectric layer. A second dielectric layer is over the first dielectric layer and on the front side of the semiconductor substrate. An opening penetrates through the semiconductor substrate from the backside of the semiconductor substrate, wherein the opening includes a first portion extending to expose a portion of the metal pad and a second portion extending to expose a portion of the second dielectric layer. A metal layer is formed in the first portion and the second portion of the opening.