The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Dec. 27, 2013
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Tsung-Yu Chiang, New Taipei, TW;
Chung-Wei Lin, Toufen Township, TW;
Kuang-Hsin Chen, Jung-Li, TW;
Bor-Zen Tien, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Abstract
Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a first fin partially surrounded by a first isolation structure and protruding through a top surface thereof. The semiconductor device also includes a second fin partially surrounded by a second isolation structure and protruding through a top surface thereof. The top surface of the first isolation structure is higher than the top surface of the second isolation structure such that the second fin has a height higher than that of the first fin. The second isolation structure has a dopant concentration higher than that of the first isolation structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile