The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Aug. 14, 2014
International Business Machines Corporation, Armonk, NY (US);
Marc A. Bergendahl, Troy, NY (US);
James J. Demarest, Rensselaer, NY (US);
Alex R. Hubbard, East Greenbush, NY (US);
Richard Johnson, Albany, NY (US);
Ryan O. Jung, Rensselaer, NY (US);
James J. Kelly, Schenectady, NY (US);
Sanjay C. Mehta, Niskayuna, NY (US);
Alexander Reznicek, Troy, NY (US);
Allan W. Upham, Waterford, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of particle mitigation which includes obtaining a semiconductor wafer having a nonfunctional backside and a functional frontside on which semiconductor devices are formed by one or more lithography processes; coating the backside with a mitigating layer comprising silicon or amorphous carbon; patterning the mitigating layer to form indentations in the mitigating layer; placing the semiconductor wafer onto a wafer chuck such that the wafer chuck makes direct contact with the coated and patterned backside mitigating layer; and while maintaining the coated and patterned backside mitigating layer in direct contact with the wafer chuck, performing a first lithographic process on the frontside.