The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2015

Filed:

Oct. 14, 2013
Applicant:

Kla-tencor Corporation, Milpitas, CA (US);

Inventors:

Ellis Chang, Saratoga, CA (US);

Amir Widmann, Doar Na, IL;

Allen Park, San Jose, CA (US);

Assignee:

KLA-Tencor Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01); G01R 31/26 (2014.01); G01N 21/95 (2006.01); H01L 21/66 (2006.01); G01N 21/956 (2006.01); G03F 7/20 (2006.01); G01N 21/88 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9501 (2013.01); G01N 21/95607 (2013.01); G03F 7/7065 (2013.01); H01L 22/12 (2013.01); G01N 2021/8822 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Inspection guided overlay metrology may include performing a pattern search in order to identify a predetermined pattern on a semiconductor wafer, generating a care area for all instances of the predetermined pattern on the semiconductor wafer, identifying defects within generated care areas by performing an inspection scan of each of the generated care areas, wherein the inspection scan includes a low-threshold or a high sensitivity inspection scan, identifying overlay sites of the predetermined pattern of the semiconductor wafer having a measured overlay error larger than a selected overlay specification utilizing a defect inspection technique, comparing location data of the identified defects of a generated care area to location data of the identified overlay sites within the generated care area in order to identify one or more locations wherein the defects are proximate to the identified overlay sites, and generating a metrology sampling plan based on the identified locations.


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