The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Sep. 12, 2013
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Hung-Ta Lin, Hsinchu, TW;
Mao-Lin Huang, Hsinchu, TW;
Li-Ting Wang, Hsinchu, TW;
Chien-Hsun Wang, Hsinchu, TW;
Meng-Ku Chen, New Taipei, TW;
Chun-Hsiung Lin, Hsinchu County, TW;
Pang-Yen Tsai, Hsin-Chu Hsian, TW;
Hui-Cheng Chang, Tainan, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A transistor includes a gate terminal, a source terminal and a drain terminal. At least one of the source and drain terminals has a layered configuration that includes a terminal layer and an intervening layer. The terminal layer has a top surface and a bottom surface. The intervening layer is located within the terminal layer, between and spaced from the top and bottom surfaces, is oriented to be perpendicular to current flow, and is less than one tenth the thickness of the terminal layer. The terminal layer and the intervening layer include a common semiconductive compound and a common dopant, with a concentration of the dopant in the intervening layer being over ten times an average concentration of the dopant in the terminal layer.