The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Mar. 14, 2014
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Kang Sub Yim, Palo Alto, CA (US);
Pendar Ardalan, Palo Alto, CA (US);
Sure Ngo, Dublin, CA (US);
Alexandros T. Demos, Fremont, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/06 (2013.01); C23C 16/401 (2013.01); C23C 16/45512 (2013.01); C23C 16/45561 (2013.01); C23C 16/505 (2013.01); H01L 21/02126 (2013.01); H01L 21/02203 (2013.01); H01L 21/02216 (2013.01); H01L 21/02274 (2013.01); H01L 21/02304 (2013.01); H01L 21/7682 (2013.01); H01L 21/76829 (2013.01); H01L 2221/1047 (2013.01);
Abstract
Embodiments of the present invention provide a film stack and method for depositing an adhesive layer for a low dielectric constant bulk layer without the need for an initiation layer. A film stack for use in a semiconductor device comprises of a dual layer low-K dielectric deposited directly on an underlying layer. The dual low-K dielectric consists of an adhesive layer deposited without a carbon free initiation layer.