The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2015

Filed:

Apr. 14, 2014
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yung-Yao Lee, Zhubei, TW;

Ying-Ying Wang, Xin-Zhu, TW;

Yi-Ping Hsieh, Hsinchu, TW;

Heng-Hsin Liu, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G01B 11/14 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70633 (2013.01); G01B 11/14 (2013.01); G01B 2210/56 (2013.01);
Abstract

A process of measuring overlay metrologies of wafers, the wafer having a plurality of patterned layers. The process begins with retrieving historical overlay metrologies from a database, and real overlay metrologies of a first group of the wafers are measured. On the other hand, virtual overlay metrologies of a second group of the wafers are calculated with the retrieved historical overly metrologies. The real overlay metrologies of the first group of the wafers and the virtual overlay metrologies of the second group of the wafers are stored to the database as the historical overlay metrologies.


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