The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Nov. 17, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ta-Chuan Liao, Taichung, TW;
Chien-Kuo Yang, Taipei, TW;
Felix Ying-Kit Tsui, Cupertino, CA (US);
Shih-Hsien Chen, Zhubei, TW;
Liang-Tai Kuo, Hsinchu County, TW;
Chun-Yao Ko, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The NVM device includes a semiconductor substrate having a first region and a second region. The NVM device includes a data-storing structure formed in the first region and designed operable to retain charges. The NVM device includes a capacitor formed in the second region and coupled with the data-storing structure for data operations. The data-storing structure includes a first doped well of a first-type in the semiconductor substrate. The data-storing structure includes a first gate dielectric feature on the first doped well. The data-storing structure includes a first gate electrode disposed on the first gate dielectric feature and configured to be floating. The capacitor includes a second doped well of the first-type. The capacitor includes a second gate dielectric feature on the second doped well. The capacitor also includes a second gate electrode disposed on the second gate dielectric feature and connected to the first gate electrode.