The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Apr. 08, 2013
Aixtron SE, Herzogenrath, DE;
Woong Park, Kyeonggi-do, KR;
Young Jin Jang, Kyeonggi-do, KR;
Gi Youl Kim, San Jose, CA (US);
Brian Lu, Fremont, CA (US);
Greg Siu, Saratoga, CA (US);
Hugo Silva, Aachen, DE;
Sasangan Ramanathan, San Ramon, CA (US);
Aixtron SE, Herzogenrath, DE;
Abstract
There is disclosed a method for forming a TiSiN thin film on a substrate according to ALD including a first process of preheating a substrate while supplying Ar or Ncontaining inert gas to a chamber, after disposing a substrate in a chamber; a second process of forming a TiN film on the substrate by repeating at least one time a process of purging over-supplied Ti containing gas after supplying Ti containing gas and inert gas after that and a process of purging residual product after supplying N containing gas and inert gas after that; a third process of forming a SiN film by repeating at least one time a process of purging over-supplied Si containing gas after supplying Si containing gas on the TiN film and supplying inert gas after that and a process of purging residual product after supplying N containing gas and supplying inert gas after that; and a fourth process of forming a TiSiN film having a desired thickness by repeating the second and third processes at least one time, a partial pressure range of the gas used in forming the TiSiN thin film is Ti containing gas: 9×10Torr or less, Si containing gas: 1×10˜3×10Torr and N containing gas: 7×10˜6×10Torr, and a pressure range of the gas is 500 mTorr˜5 Torr and the Si content of the formed TiSiN thin film is 20 atom % or less.