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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9159605 B1

PDFFull Text
Date of Patent:
Oct. 13, 2015

Filed:

Aug. 28, 2014

Controlled process and resulting device

Applicant:

Silicon Genesis Corporation, San Jose, CA (US);

Inventors:

Francois J. Henley, Aptos, CA (US);

Nathan Cheung, Albany, CA (US);

Assignee:

SILICON GENESIS CORPORATION, San Jose, CA (US);

Attorney:
Primary Examiner:

Hsien Ming Lee

Int. Cl.
CPC ...
H01L 21/46 (2006.01); H01L 21/425 (2006.01); H01L 21/762 (2006.01); H01L 21/268 (2006.01); H01L 21/18 (2006.01); H01L 21/20 (2006.01); H01L 21/78 (2006.01); H01L 21/223 (2006.01); H01L 21/304 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76254 (2013.01); H01L 21/187 (2013.01); H01L 21/2007 (2013.01); H01L 21/2236 (2013.01); H01L 21/265 (2013.01); H01L 21/268 (2013.01); H01L 21/304 (2013.01); H01L 21/7624 (2013.01); H01L 21/7813 (2013.01); H01L 21/26506 (2013.01); Y10S 117/915 (2013.01); Y10S 156/93 (2013.01); Y10S 438/974 (2013.01); Y10S 438/977 (2013.01);
Abstract

A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.

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