The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Oct. 19, 2012
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Li-Jui Chen, Hsinchu, TW;

Fu-Jye Liang, Zhubei, TW;

Hung-Chang Hsieh, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 11/00 (2006.01); G03B 27/32 (2006.01); G03F 7/20 (2006.01); G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70608 (2013.01); G03F 7/70616 (2013.01); G03F 7/70633 (2013.01); G03F 9/7003 (2013.01); G03F 9/7034 (2013.01);
Abstract

A method includes receiving a substrate having a material feature embedded in the substrate, wherein receiving the substrate includes receiving a first leveling data and a first overlay data generated when forming the material feature, deposing a resist film on the substrate, and exposing the resist film using a predicted overlay correction data to form a resist pattern overlying the material feature on the substrate, wherein using the predicted overlay correction data includes generating a second leveling data and calculating the predicted overlay correction data using the first leveling data, the first overlay data, and the second leveling data.


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