The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Mar. 23, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Ting-Hau Wu, Yilan, TW;
Kuei-Sung Chang, Kaohsiung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/46 (2006.01); B81C 1/00 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00531 (2013.01); B81C 1/0038 (2013.01); B81C 1/00357 (2013.01); H01L 21/3065 (2013.01);
Abstract
The present disclosure is directed to a device and its method of manufacture in which a protective region is formed below a suspended body. The protective region allows deep reactive ion etching of a bulk silicon body to form a MEMS device without encountering the various problems presented by damage to the silicon caused by backscattering of oxide during over etching periods of DRIE processes.